Improving carrier mobility and reliability characteristics of high-k NMOSFET by using stacked Y2O3/HfO2 gate dielectric

Author

Zhu, Feng ; Kang, C.Y. ; Rhee, S.J. ; Choi, C.H. ; Krishnan, S.A. ; Zhang, M. ; Kim, H.S. ; Lee, T. ; Ok, I. ; Thareja, G. ; Lee, J.C.

Author_Institution

Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX

fYear

2006

fDate

26-30 March 2006

Firstpage

659

Lastpage

660

Abstract

To overcome the issues of mobility degradation and charge trapping in the high-k MOSFET, a stacked Y₂O₃ (top)/HfO₂ (bottom) multi-metal gate dielectric with TaN gate has been developed. Compared to the HfO₂ reference, the new dielectric shows similar scalability, but superior device performance and reliability characteristics. Channel mobility, fast transient charge trapping, bias temperature instability, and stress induced leakage current have been improved for Y₂O₃/HfO₂ device

Keywords

MOSFET; carrier mobility; hafnium compounds; high-k dielectric thin films; semiconductor device reliability; tantalum compounds; yttrium compounds; TaN; Y₂O₃-HfO₂; bias temperature instability; carrier mobility; channel mobility; high-k MOSFET; high-k NMOSFET; mobility degradation; multimetal gate dielectric; reliability characteristics; stress induced leakage current; transient charge trapping; Degradation; Dielectric devices; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; Leakage current; MOSFET circuits; Scalability; Stress; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium Proceedings, 2006. 44th Annual., IEEE International

Conference_Location

San Jose, CA

Print_ISBN

0-7803-9498-4

Electronic_ISBN

0-7803-9499-2

Type

conf

DOI

10.1109/RELPHY.2006.251311

Filename

4017252