Title :
Reliability of sub 30NM BT(Body-Tied)-FinFET with HFSION/Poly Silicon Gate Stack for symmetric Vth control
Author :
Cho, Eun Suk ; Lee, Choong-Ho ; Fayrushin, Albert ; Park, Hong Bae ; Park, Donggun
Author_Institution :
Semicond. R&D Center, Samsung Electron. Co., Yongin
Abstract :
In this paper, a symmetric threshold voltage of Wfin =10nm FinFET has been achieved by using HfSiON dielectric (Vtn = 0.25V / Vtp = -0.28V) since the threshold voltage control (>|0.2V|) of 10nm FinFET is problematic because the body is fully depleted. Fermi level pinning and low boron segregation effects of HfSiON are the main mechanisms determining appropriate threshold voltages. And the reliability issues (shift of JG, GM and ICP according to stress and hot carrier life time) of HfSiON and Gnox dielectric with various fin width have been also evaluated for the first time
Keywords :
Fermi level; MOSFET; dielectric materials; hafnium compounds; semiconductor device reliability; silicon compounds; 30 nm; Fermi level pinning; Gnox dielectric; HfSiON; body-tied-FinFET; gate stack; low boron segregation effects; poly silicon; reliability issues; symmetric threshold voltage control; Boron; Degradation; Dielectric substrates; Doping; FinFETs; Hot carriers; Silicon; Stress control; Threshold voltage; Voltage control; Fermi level pinning; FinFET; HfSiON dielectric; Reliability; Threshold voltage control;
Conference_Titel :
Reliability Physics Symposium Proceedings, 2006. 44th Annual., IEEE International
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-9498-4
Electronic_ISBN :
0-7803-9499-2
DOI :
10.1109/RELPHY.2006.251313
