Title :
Generalized Models for Optimization of BTI in SiON and High-K Dielectrics
Author :
Haggag, A. ; Kalpat, S. ; Moosa, M. ; Liu, N. ; Kuffler, M. ; Tseng, H.-H. ; Luo, T.-Y. ; Schaeffer, J. ; Gilmer, D. ; Samavedam, S. ; Hegde, R. ; White, B.E., Jr. ; Tobin, P.J.
Author_Institution :
Freescale Semicond. Inc., Austin, TX
Abstract :
A generalized reliability model of BTI is presented where it is shown that gate stacks with similar interfacial layer lie on the same NBTI vs. E-field universal curve and those with similar bulk layer lie on the same PBTI vs. E-field universal curve. From these universal curves, an optimal gate stack can be derived for which NBTI=PBTI
Keywords :
MOSFET; dielectric materials; high-k dielectric thin films; interface structure; semiconductor device models; semiconductor device reliability; silicon compounds; BTI optimization; E-field universal curve; NBTI; PBTI; SiON; high-k dielectrics; interfacial layer; optimal gate stack; Bonding; Electron traps; High-K gate dielectrics; Hydrogen; MOSFETs; Niobium compounds; Nitrogen; Semiconductor device reliability; Titanium compounds; Tunneling;
Conference_Titel :
Reliability Physics Symposium Proceedings, 2006. 44th Annual., IEEE International
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-9498-4
Electronic_ISBN :
0-7803-9499-2
DOI :
10.1109/RELPHY.2006.251314
