Study of Cu Migration-Induced Failure of Inter-Layer Dielectric

Author

Hwang, Sang-Soo ; Jung, Sung-Yup ; Jung, Jung-Kyu ; Joo, Young-Chang

Author_Institution

Sch. of Mater. Sci. & Eng., Seoul Nat. Univ.

fYear

2006

fDate

26-30 March 2006

Firstpage

673

Lastpage

674

Abstract

In order to reduce the RC delay problem, Cu interconnects are now widely used with low-k dielectrics. However, the migration of Cu into ILD (inter layer dielectrics) has been known as a major reliability concern under BTS (bias-temperature-stress) conditions. For the optimization of reliability of devices based on Cu interconnects with low-k dielectrics, theoretical and quantitative understanding of Cu migration induced dielectric breakdown mechanism is needed

Keywords

RC circuits; circuit optimisation; copper; dielectric materials; electric breakdown; integrated circuit interconnections; integrated circuit reliability; Cu; RC delay problem; bias-temperature-stress; copper interconnects; copper migration-induced failure; device reliability optimization; dielectric breakdown; inter-layer dielectric; low-k dielectrics; Acceleration; Delay; Dielectric breakdown; Dielectric devices; Electric breakdown; Electrodes; Failure analysis; Materials science and technology; Reliability theory; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium Proceedings, 2006. 44th Annual., IEEE International

Conference_Location

San Jose, CA

Print_ISBN

0-7803-9498-4

Electronic_ISBN

0-7803-9499-2

Type

conf

DOI

10.1109/RELPHY.2006.251318

Filename

4017259