Title :
Simulation of Electrical and Mechanical Properties of Air-Bridge Cu Interconnects
Author :
Park, Hyun ; Kraatz, Matthias ; Im, Jay ; Kastenmeier, Bernd ; Ho, Paul S.
Author_Institution :
Lab. for Interconnect & Packaging, Texas Univ., Austin, TX
Abstract :
Several air-bridge type Cu interconnects, with air-gaps in the metal line level or extending to the via level, were modeled to evaluate their electrical performances and stress characteristics. It was found that the combination of fully-dense SiCOH dielectric and air-bridging down to the via level provides an effective dielectric constant of 2.27. This meets the ITRS need for the 45nm technology node and is extendable to the 32nm node. The stress levels of Cu line and via in the model structures depended on the dielectric material and air-gap configuration. For example, when air-gaps are extended into the via level, the stress levels for SiCOH were intermediate between those for TEOS and p-MSQ
Keywords :
carbon compounds; copper; dielectric materials; integrated circuit interconnections; integrated circuit modelling; nanotechnology; oxygen compounds; permittivity; silicon compounds; 32 nm; 45 nm; Cu; ITRS; SiCOH; TEOS; air-bridge copper interconnects; air-gap configuration; dielectric constant; dielectric material; electrical performances; electrical properties simulation; fully-dense dielectric; mechanical properties simulation; p-MSQ; stress characteristics; Air gaps; Dielectric constant; Dielectric materials; Fabrication; Mechanical factors; Performance evaluation; Residual stresses; Semiconductor device modeling; Stability; Thermal stresses; air-bridge Cu interconnect; dielectric; effective dielectric constant; stress;
Conference_Titel :
Reliability Physics Symposium Proceedings, 2006. 44th Annual., IEEE International
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-9498-4
Electronic_ISBN :
0-7803-9499-2
DOI :
10.1109/RELPHY.2006.251320
