• DocumentCode
    2733222
  • Title

    MMIC compatible AlSb/InAs HEMT with stable AlGaSb buffer layers

  • Author

    Tsai, R. ; Barsky, M. ; Lee, J. ; Boos, J.B. ; Bennett, B.R. ; Magno, R. ; Namba, C. ; Liu, P.H. ; Gutierrez, A. ; Lai, R.

  • Author_Institution
    Space & Electron. Group, TRW Inc., Redondo Beach, CA, USA
  • fYear
    2002
  • fDate
    6-8 Aug. 2002
  • Firstpage
    276
  • Lastpage
    280
  • Abstract
    In this paper, we present state-of-the-art fT and fmax results of 130 GHz, and 110 GHz for AlSb/InAs HEMTs with AlGaSb/AlSb metamorphic buffer layers that demonstrate InAs-channel HEMTs that are stable with exposure to air and are compatible with standard MMIC production processes.
  • Keywords
    HEMT integrated circuits; III-V semiconductors; aluminium compounds; equivalent circuits; field effect MIMIC; gallium compounds; high electron mobility transistors; indium compounds; millimetre wave field effect transistors; molecular beam epitaxial growth; semiconductor device models; stability; 110 GHz; 130 GHz; AlGaSb-AlSb; AlSb-InAs; AlSb/InAs HEMT; EHF; InAs channel HEMTs; MBE; MIMIC compatible HEMT; MM-wave HEMT; metamorphic buffer layers; stable AlGaSb buffer layers; standard MMIC production processes; Buffer layers; Electron mobility; Etching; Gallium arsenide; HEMTs; Implants; MMICs; Molecular beam epitaxial growth; Production; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    High Performance Devices, 2002. Proceedings. IEEE Lester Eastman Conference on
  • Print_ISBN
    0-7803-7478-9
  • Type

    conf

  • DOI
    10.1109/LECHPD.2002.1146764
  • Filename
    1146764
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2733222