Title :
An electromigration and related resistance increase phenomenon on a tungsten filled via hole structure
Author :
Matsuoka, F. ; Hama, K. ; Itoh, H. ; Nakata, R. ; Iwai, H. ; Kanzaki, K.
Author_Institution :
Toshiba Corp., Kawasaki, Japan
Abstract :
The reliability of a via hole filling structure using selective tungsten CVD by a cold-wall reactor using WF/sub 6/ and SiH/sub 4/ has been studied. It has been experimentally determined that the reliability for the electromigration of a tungsten-filled via hole structure is significantly improved compared with that for a conventional non-filled via hole structure. Via hole resistance change during the electromigration test was also evaluated. A phenomenon wherein via hole resistance increased due to Si migration was found, specifically under high-temperature conditions. However, it is negligibly small for the usual operating conditions. The results are considered pertinent to the development of VLSI/ULSI devices.<>
Keywords :
CVD coatings; VLSI; electromigration; metallisation; reliability; tungsten; Si migration; SiH/sub 4/; VLSI; W; WF/sub 6/; cold-wall reactor; electromigration; high-temperature conditions; reliability; selective CVD; via hole filling structure; via hole resistance; Aluminum; Electromigration; Filling; Inductors; Insulation; Plasma temperature; Reliability engineering; Silicon; Testing; Tungsten;
Conference_Titel :
VLSI Multilevel Interconnection Conference, 1988. Proceedings., Fifth International IEEE
Conference_Location :
Santa Clara, CA, USA
DOI :
10.1109/VMIC.1988.14230
