Porosity-Induced Electric Field Enhancement and Its Impact on Charge Transport in Porous Inter-Metal Dielectrics

Author

Hong, Changsoo ; Milor, Linda

Author_Institution

Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA

fYear

2006

fDate

26-30 March 2006

Firstpage

679

Lastpage

680

Abstract

Free volumes or pores in porous ultra-low-k dielectrics enhance the local electric field in the neighborhood. In this paper, this enhanced local electric field is shown to facilitate the transport of charged species such as copper ions, electrons, or holes. This leads to the conclusion that porosity in dielectrics can degrade the insulating property and enhance the dielectric breakdown mechanism

Keywords

copper; dielectric materials; electric breakdown; electric fields; electrons; metals; porous semiconductors; semiconductor device reliability; Monte Carlo; charge transport; copper ions; dielectric breakdown mechanism; electrons; free volumes; holes; pores; porosity-induced electric field enhancement; porous inter-metal dielectrics; porous ultra-low-k dielectrics; reliability; Anisotropic magnetoresistance; Charge carrier processes; Copper; Dielectric breakdown; Dielectric constant; Dielectric devices; Dielectric films; Dielectric materials; Monte Carlo methods; Polarization; Monte Carlo; breakdown; dielectrics; low-k; porosity; reliability; transport;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium Proceedings, 2006. 44th Annual., IEEE International

Conference_Location

San Jose, CA

Print_ISBN

0-7803-9498-4

Electronic_ISBN

0-7803-9499-2

Type

conf

DOI

10.1109/RELPHY.2006.251321

Filename

4017262