Title :
Porosity-Induced Electric Field Enhancement and Its Impact on Charge Transport in Porous Inter-Metal Dielectrics
Author :
Hong, Changsoo ; Milor, Linda
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA
Abstract :
Free volumes or pores in porous ultra-low-k dielectrics enhance the local electric field in the neighborhood. In this paper, this enhanced local electric field is shown to facilitate the transport of charged species such as copper ions, electrons, or holes. This leads to the conclusion that porosity in dielectrics can degrade the insulating property and enhance the dielectric breakdown mechanism
Keywords :
copper; dielectric materials; electric breakdown; electric fields; electrons; metals; porous semiconductors; semiconductor device reliability; Monte Carlo; charge transport; copper ions; dielectric breakdown mechanism; electrons; free volumes; holes; pores; porosity-induced electric field enhancement; porous inter-metal dielectrics; porous ultra-low-k dielectrics; reliability; Anisotropic magnetoresistance; Charge carrier processes; Copper; Dielectric breakdown; Dielectric constant; Dielectric devices; Dielectric films; Dielectric materials; Monte Carlo methods; Polarization; Monte Carlo; breakdown; dielectrics; low-k; porosity; reliability; transport;
Conference_Titel :
Reliability Physics Symposium Proceedings, 2006. 44th Annual., IEEE International
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-9498-4
Electronic_ISBN :
0-7803-9499-2
DOI :
10.1109/RELPHY.2006.251321
