Improved Bipolar Electromigration Model

Author

Doyen, L. ; Federspiel, X. ; Ney, D.

Author_Institution

CR&D labs, Philips Semicond., Crolles

fYear

2006

fDate

26-30 March 2006

Firstpage

683

Lastpage

684

Abstract

Electromigration (EM) in advanced copper interconnects has become a strong limitation factor for IC designs. As a matter of fact, interconnects design is facing two contradictory needs: decrease ICs dimension to save silicon surface and maintain sufficient EM lifetime under dc stress. In a view, to establish robust design rules, that does not over constraint designers, it is necessary to build accurate extrapolation models. We propose here a new a new ac EM model, that can be used to establish relevant design rules

Keywords

copper; electromigration; integrated circuit design; integrated circuit interconnections; integrated circuit modelling; silicon; Cu; Si; ac electromigration model; bipolar electromigration model; copper interconnects; dc stress; extrapolation models; integrated circuit designs; interconnect design; robust design rules; silicon surface; Automatic testing; Bipolar integrated circuits; Copper; Electromigration; Frequency; Integrated circuit modeling; Microelectronics; Silicon; Stress; Temperature distribution;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium Proceedings, 2006. 44th Annual., IEEE International

Conference_Location

San Jose, CA

Print_ISBN

0-7803-9498-4

Electronic_ISBN

0-7803-9499-2

Type

conf

DOI

10.1109/RELPHY.2006.251323

Filename

4017264