Intersubband transitions in narrow InAs/AlSb quantum wells

Author

Larrabee, D.C. ; Tang, J. ; Liang, M. ; Khodaparast, G.A. ; Kono, J. ; Ueda, K. ; Nakajima, Y. ; Suekane, O. ; Sasa, S. ; Inoue, M. ; Kolokolov, K.I. ; Li, J. ; Ning, C.Z.

Author_Institution

Dept. of Electr. & Comput. Eng., Rice Univ., Houston, TX, USA

fYear

2002

fDate

6-8 Aug. 2002

Firstpage

324

Lastpage

333

Abstract

We have investigated intersubband transitions (ISBTs) in InAs/AlSb multiple quantum wells. In wells from 7 to 10 nm wide, the ISBT energy increases with decreasing well width and temperature. We do not observe photoluminescence (PL) from these wells. In wells from 2.4 to 6 nm wide, we observe PL but not ISBTs. We have calculated the band structure of these samples using an 8 band k.p theory including strain and many-body effects. We have modelled the dependence of the ISBT energy on well width and temperature. In addition, we have observed the effects on ISBTs of QW interface type and Si doping in the well.

Keywords

III-V semiconductors; aluminium compounds; band structure; doping profiles; indium compounds; many-body problems; photoluminescence; semiconductor quantum wells; 2.4 to 6 nm; 7 to 10 nm; ISBT energy; InAs-AlSb; InAs/AlSb narrow multiple quantum wells; MQW; PL; QW interface type; band structure; intersubband absorptions; many-body effects; multi-band kp theory; photoluminescence; quantum well intersubband transitions; strain effects; well Si doping; well width/size/temperature; Absorption; Capacitive sensors; Frequency conversion; Lattices; Photoluminescence; Quantum cascade lasers; Quantum computing; Quantum well devices; Space technology; Temperature dependence;

fLanguage

English

Publisher

ieee

Conference_Titel

High Performance Devices, 2002. Proceedings. IEEE Lester Eastman Conference on

Print_ISBN

0-7803-7478-9

Type

conf

DOI

10.1109/LECHPD.2002.1146771

Filename

1146771