Title :
Optimization of group V switching times for InGaP/GaAs heterostructures grown by LP-MOCVD
Author :
Yang, Q. ; Hartmann, Q.J. ; Curtis, A.P. ; Lin, C. ; Ahmari, D.A. ; Scott, D. ; Kuo, H.C. ; Chen, H. ; Stillman, G.E.
Author_Institution :
Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
Abstract :
We studied the effect of group V switching times on the formation of interfacial layers in InGaP/GaAs heterostructures grown by LP-MOCVD using low temperature photoluminescence (PL), double crystal X-ray diffraction (DCXRD) and high resolution transmission electron microscopy (HRTEM). Due to the severe substitution process of P by As, the quality of InGaP-to-GaAs interface was very sensitive to switching times. By optimizing the switching conditions, we were able to minimize the interfacial layers to one monolayer (ML) of In0.5Ga0.5 As at the GaAs-to-InGaP interface and 1 ML of In0.65Ga 0.15P0.15As0.85 at the InGaP-to-GaAs interface. Heterojunction bipolar transistors (HBTs) grown using this switching scheme showed excellent etch selectivity as well as dc characteristics
Keywords :
III-V semiconductors; MOCVD; X-ray diffraction; etching; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; photoluminescence; semiconductor growth; semiconductor heterojunctions; semiconductor superlattices; transmission electron microscopy; vapour phase epitaxial growth; DC characteristics; HBTs; HRTEM; In0.5Ga0.5As; In0.65Ga0.15P0.15As0.85 ; InGaP-GaAs; InGaP/GaAs heterostructures; LP-MOCVD; double crystal X-ray diffraction; etch selectivity; group V switching times; heterojunction bipolar transistors; high resolution transmission electron microscopy; interfacial layers; low temperature photoluminescence; monolayer; optimization; Ash; Chemicals; Crystalline materials; Gallium arsenide; Laboratories; Lattices; Materials science and technology; Photoluminescence; Temperature sensors; Wet etching;
Conference_Titel :
Compound Semiconductors, 1997 IEEE International Symposium on
Conference_Location :
San Diego, CA
Print_ISBN :
0-7503-0556-8
DOI :
10.1109/ISCS.1998.711571
