Title :
Investigation of Charge Loss in Cycled NBit Cells via Field and Temperature Accelerations
Author :
Tsai, W.J. ; Zous, N.K. ; Chen, H.Y. ; Liu, Lenvis ; Yeh, C.C. ; Chen, Sam ; Lu, W.P. ; Wang, Tahui ; Ku, Joseph ; Lu, Chih-Yuan
Author_Institution :
Macronix Int. Co. Ltd, Hsin-Chu
Abstract :
In nitride storage flash memories, the high-VT state retention loss induced by field and temperature acceleration is compared between single cells and products. Our result reveal that the charge loss path is the same no matter which accelerating methods is used. The traps created at the bottom oxide during P/E cycling provide such leak paths. In addition, the annealing of interface states would play a role in the VT loss during high-temperature bake
Keywords :
annealing; flash memories; integrated circuit reliability; interface states; semiconductor storage; Nbit cells; P/E cycling; bottom oxide; charge loss investigation; charge loss path; field accelerations; high-temperature bake; interface states annealing; leak paths; nitride storage flash memories; state retention loss; temperature accelerations; traps; Acceleration; Annealing; Electron traps; Flash memory; Interface states; Power generation; Reactive power; Temperature; Testing; Tunneling;
Conference_Titel :
Reliability Physics Symposium Proceedings, 2006. 44th Annual., IEEE International
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-9498-4
Electronic_ISBN :
0-7803-9499-2
DOI :
10.1109/RELPHY.2006.251328
