Title :
Endurance and Retention Characteristics of SONOS EEPROMs Operated using BTBT Induced Hot Hole Erase
Author :
Kumar, Bharath P. ; Murakami, E. ; Kamohara, S. ; Mahapatra, S.
Author_Institution :
Dept. of Electr. Eng., Indian Inst. of Technol., Bombay
Abstract :
Endurance and retention of SONOS EEPROMs operated using channel hot electron injection (CHEI) and band-to-band tunneling (BTBT) induced hot hole injection (HHI) are studied. Cycling window closure is improved by optimizing erase bias, and its effect on cell degradation is studied. The retention loss in program state is studied under different erase conditions and correlated to cell degradation caused by HHI
Keywords :
EPROM; hot carriers; integrated circuit reliability; silicon compounds; tunnelling; SONOS EEPROM; band-to-band tunneling; cell degradation; channel hot electron injection; cycling window closure; endurance characteristics; erase bias optimization; hot hole erase; retention characteristics; retention loss; Annealing; CMOS process; Channel hot electron injection; Charge carrier processes; Degradation; EPROM; Hot carriers; SONOS devices; Tellurium; Tunneling;
Conference_Titel :
Reliability Physics Symposium Proceedings, 2006. 44th Annual., IEEE International
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-9498-4
Electronic_ISBN :
0-7803-9499-2
DOI :
10.1109/RELPHY.2006.251331
