DocumentCode :
2733412
Title :
Temperature Dependence of Endurance Characteristics in NOR Flash Memory Cells
Author :
Lee, Wook H. ; Park, Chan-Kwang ; Kim, Kinam
Author_Institution :
Technol. Dev. Team, Samsung Electron., Yong-In
fYear :
2006
fDate :
26-30 March 2006
Firstpage :
701
Lastpage :
702
Abstract :
A temperature dependence of endurance characteristics in NOR flash cells is presented. The window closing is accelerated after 100 K cycling due to a degraded programming speed at 85 degC compared to that measured at 25 degC. At 25 degC, both oxide traps and interface traps reduce program and erase speeds, while at 85 degC the effects of interface traps generated at the drain overlap region become increased, interrupting the hot electron injection during program operation. Two processing conditions including growth condition of tunnel oxide and the type of passivation layer are found to be related to the degradation of endurance
Keywords :
NOR circuits; flash memories; hot carriers; integrated circuit reliability; interface states; passivation; 25 C; 85 C; NOR flash memory cells; endurance characteristics; erase speed; hot electron injection; interface traps reduce; oxide traps; passivation layer; program speed; temperature dependence; tunnel oxide; window closing; Acceleration; Degradation; Electron traps; Flash memory cells; Interface states; Isolation technology; Passivation; Secondary generated hot electron injection; Temperature dependence; Velocity measurement; Endurance; Interface Trap; NOR flash; Si-H;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium Proceedings, 2006. 44th Annual., IEEE International
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-9498-4
Electronic_ISBN :
0-7803-9499-2
Type :
conf
DOI :
10.1109/RELPHY.2006.251332
Filename :
4017273
Link To Document :
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