DocumentCode :
2733418
Title :
A New Phenomenon of Retention Time Evolution in Embedded DRAM Technology with High-K Dielectrics (Ta2O5) MIM Capacitor After HTOL Test
Author :
Shih, J.R. ; Tsui, R.F. ; Liu, Kevin ; Tsai, Y.S. ; Chin, H.W. ; Wu, Kenneth
Author_Institution :
Reliability Assurance Div., Taiwan Semicond. Manuf. Co., Hsin-Chu
fYear :
2006
fDate :
26-30 March 2006
Firstpage :
703
Lastpage :
704
Abstract :
In this paper, a new phenomenon regarding to failure bit count (FBC) distribution and data retention time of embedded DRAM with high-K dielectric Ta2O5 MIM capacitors has been observed and explored. Different from conventional knowledge with FBC increase or retention time reduction of DRAM after burn-in, it is found FBC decreased and retention time increased in the sub-0.1mum embedded DRAM technology with high-K dielectric Ta2O5 MIM capacitors. Although the band-to-defect tunneling (BDT) induced junction leakage currents of cell transistors under hot carrier injection (HCI) and off-state bias-temperature (BT) stress will be enhanced, which degrade the FBC and retention time performance. However, it was found the leakage current reduction of high-K dielectric Ta2O5 capacitor after burn-in dominates the FBC reduction and retention time increase
Keywords :
DRAM chips; MIM devices; capacitors; dielectric materials; embedded systems; hot carriers; integrated circuit testing; leakage currents; tantalum compounds; transistors; tunnelling; 0.1 micron; HTOL test; MIM capacitor; Ta2O5; band-to-defect tunneling; cell transistors; embedded DRAM technology; failure bit count distribution; high-K dielectrics; hot carrier injection; junction leakage currents; leakage current reduction; off-state bias-temperature stress; retention time evolution; Degradation; High-K gate dielectrics; Hot carrier injection; Human computer interaction; Leakage current; MIM capacitors; Random access memory; Stress; Testing; Tunneling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium Proceedings, 2006. 44th Annual., IEEE International
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-9498-4
Electronic_ISBN :
0-7803-9499-2
Type :
conf
DOI :
10.1109/RELPHY.2006.251333
Filename :
4017274
Link To Document :
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