Title :
GaInP/GaAs tunnel collector HBTs: base-collector barrier height analysis
Author :
Keogh, D.M. ; Welty, R.J. ; Lopez-Gonzalez, J. ; Lutz, C.R. ; Welser, R.E. ; Asbeck, P.M.
Author_Institution :
California Univ., San Diego, La Jolla, CA, USA
Abstract :
Tunnel collector HBTs employ a thin layer of GaInP between the GaAs base and collector regions, in order to suppress hole injection when the base-collector junction is forward biased. Devices with a low offset voltage of 30 mV, and low knee voltage of ∼0.3 V, while still maintaining high current gain (170), and good RF performance with fT=54 GHz and fMAX=68 GHz have been demonstrated. The devices exhibit increased output conductance as compared to conventional GaInP/GaAs SHBTs, due to a residual barrier at the base-collector junction. This paper presents an experimental method for the determination of such barriers, by analyzing the collector current as a function of applied base-collector voltage, VCB.
Keywords :
III-V semiconductors; gallium compounds; heterojunction bipolar transistors; indium compounds; millimetre wave bipolar transistors; semiconductor device measurement; semiconductor device models; tunnel transistors; 0.3 V; 30 mV; 54 GHz; 68 GHz; GaInP-GaAs; GaInP/GaAs tunnel collector HBT; HBT base-collector barrier height analysis; SHBT; base-collector junction residual barriers; base-collector voltage/current analysis; current gain; forward biased base-collector junctions; heterojunction bipolar transistors; hole injection suppression; inter-base/collector region layer; knee voltage; mm-wave transistors; offset voltage; output conductance; transistor RF characteristics; Broadband amplifiers; Charge carrier processes; Electrons; Gallium arsenide; Heterojunction bipolar transistors; Knee; Low voltage; Performance gain; Radio frequency; Thermal conductivity;
Conference_Titel :
High Performance Devices, 2002. Proceedings. IEEE Lester Eastman Conference on
Print_ISBN :
0-7803-7478-9
DOI :
10.1109/LECHPD.2002.1146775
