Title :
Hot Carrier-Induced Degradation on High-K Trnasistors and Low Noise Amplifier
Author :
Yu, Chuanzhao ; Yuan, J.S.
Author_Institution :
Dept. of Electr. & Comput. Eng., Central Florida Univ., Orlando, FL
Abstract :
Channel hot carrier-induced DC and RF performance degradations in 60 nm high-k nMOSFETs are examined experimentally. The normalized degradation in RF parameters can be predicted using normalized transistor parameters. Good agreement between the analytical predictions and simulation results is obtained
Keywords :
MOSFET; circuit reliability; dielectric materials; hafnium compounds; hot carriers; low noise amplifiers; 60 nm; DC performance degradations; RF performance degradations; S-parameters; circuit reliability; hafnium dioxide; high-K transistors; hot carrier-induced degradation; low noise amplifier; nMOSFET; noise figure; Degradation; Electrons; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; Low-noise amplifiers; Radio frequency; Scattering parameters; Stress; Voltage; S-parameters; circuit reliability; hafnium dioxide; high-k dielectric; noise figure; radio frequency;
Conference_Titel :
Reliability Physics Symposium Proceedings, 2006. 44th Annual., IEEE International
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-9498-4
Electronic_ISBN :
0-7803-9499-2
DOI :
10.1109/RELPHY.2006.251335
