Packaging of microwave integrated circuits operating beyond 100 GHz

Author

Daniel, Erik ; Sokolov, Vladimir ; Sommerfeldt, Scott ; Bublitz, James ; Olson, Kimberly ; Gilbert, Barry ; Samoska, Lorene ; Chow, David

Author_Institution

Mayo Found., Rochester, MN, USA

fYear

2002

fDate

6-8 Aug. 2002

Firstpage

374

Lastpage

383

Abstract

Several methods of packaging high speed (75-330 GHz) InP HEMT MMIC devices are discussed. Coplanar wirebonding is presented with measured insertion loss of less than 0.5 dB and return loss better than -17 dB, from DC to 110 GHz. A motherboard/daughterboard packaging scheme is presented which supports minimum loss chains of MMICs using this coplanar wirebonding method.. Split-block waveguide packaging approaches are presented in G-band (140-220 GHz) with two types of MMIC-waveguide transitions: E-plane probe and antipodal finline.

Keywords

HEMT integrated circuits; III-V semiconductors; field effect MIMIC; fin lines; indium compounds; integrated circuit packaging; lead bonding; losses; waveguide transitions; 75 to 330 GHz; E-plane probe; G-band; HEMT MMIC devices; InP; MMIC-waveguide transitions; antipodal finline; coplanar wirebonding; insertion loss; microwave integrated circuits; minimum loss chains; motherboard/daughterboard packaging scheme; return loss; split-block waveguide packaging approaches; HEMTs; Indium phosphide; Insertion loss; Integrated circuit measurements; Integrated circuit packaging; Loss measurement; MMICs; Microwave devices; Microwave integrated circuits; Waveguide transitions;

fLanguage

English

Publisher

ieee

Conference_Titel

High Performance Devices, 2002. Proceedings. IEEE Lester Eastman Conference on

Print_ISBN

0-7803-7478-9

Type

conf

DOI

10.1109/LECHPD.2002.1146777

Filename

1146777