The heterogeneous integration of InAlAs/InGaAs heterojunction diodes on GaAs: impact of wafer bonding on structural and electrical characteristics

Author

Kim, Tong-Ho ; Yi, Changhy ; Brown, April S. ; Moran, Peter ; Kuech, Thomas

Author_Institution

Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA

fYear

2002

fDate

6-8 Aug. 2002

Firstpage

384

Lastpage

392

Abstract

We have investigated the influence of low temperature wafer bonding on the electrical and structural characteristics of InAlAs/InGaAs n-p heterojunction structures with similar structure to an emitter-base junction of InAlAs/InGaAs HBTs. Those n-p junction heterostructures were grown on an InP [100] substrate by solid source MBE. The effect of the wafer bonding process on the structural properties of the epitaxial layers was studied by comparing triple crystal X-ray diffraction measurements and simulations before and after bonding. In addition, the influence of the bonding process on the electrical properties of the heterojunction structures was assessed through SIMS analysis of both the bonded and nonbonded samples and an analysis of the I-V characteristics of diodes fabricated on both the bonded and non-bonded sample. These analyses show that the structural and electrical properties of the as-grown epitaxial layers were negligibly changed by the low temperature wafer transfer process.

Keywords

III-V semiconductors; X-ray diffraction; aluminium compounds; characteristics measurement; gallium arsenide; indium compounds; molecular beam epitaxial growth; p-n heterojunctions; secondary ion mass spectroscopy; semiconductor device measurement; semiconductor diodes; semiconductor epitaxial layers; semiconductor growth; wafer bonding; I-V characteristics; InAlAs-InGaAs-GaAs; InAlAs/InGaAs; SIMS analysis; bonded samples; electrical characteristics; emitter-base junction; heterogeneous integration; heterojunction diodes; low temperature wafer bonding; n-p heterojunction structures; nonbonded samples; solid source MBE; structural characteristics; triple crystal X-ray diffraction measurements; wafer transfer process; Diodes; Electric variables; Epitaxial layers; Gallium arsenide; Heterojunctions; Indium compounds; Indium gallium arsenide; Indium phosphide; Temperature; Wafer bonding;

fLanguage

English

Publisher

ieee

Conference_Titel

High Performance Devices, 2002. Proceedings. IEEE Lester Eastman Conference on

Print_ISBN

0-7803-7478-9

Type

conf

DOI

10.1109/LECHPD.2002.1146778

Filename

1146778