Enhanced GOI Degradation and Reliability Improvement of Nitrogen and Indium Co-Implant for Advanced Dual-Gate Oxide Application

Author

Wang, J.S. ; Wu, Nan-Cyi ; Lu, Hui ; Wang, Tings ; Hsieh, Joe ; Hsu, H.K. ; Chen, Dino ; Fong, Thomas ; Mei, Len

Author_Institution

ProMOS Technol. Inc., Hsin-Chu

fYear

2006

fDate

26-30 March 2006

Firstpage

709

Lastpage

710

Abstract

Indium and nitrogen implant were used to form the NMOSFET retrograde channel and low-threshold thin-oxide devices respectively. These two impurities are implanted into the same MOSFET channel before gate oxidation for an advanced low cost DRAM technology. High dose of indium implant degrades the oxide integrity, and with the acceding of the nitrogen impurities, enhanced GOI (gate oxide integrity) degradation were observed such as inducing abnormal Fowler-Nordheim (F-N) leakages, increasing ratio of near zero BVd defects. These phenomena were verified in both our 200mm and 300mm baseline. Fluorine impurities can be used to heal the implant-induced damage and improve the reliability of the gate oxides

Keywords

DRAM chips; MOSFET; fluorine; impurities; indium; ion implantation; nitrogen; oxidation; semiconductor device reliability; 200 mm; 300 mm; BVd defects; DRAM; F; Fowler-Nordheim leakages; In; N; NMOSFET retrograde channel; fluorine impurities; gate oxidation; gate oxide integrity degradation; indium impurities; low-threshold thin-oxide devices; nitrogen impurities; reliability improvement; Costs; Degradation; Design for quality; Electric breakdown; Implants; Impurities; Indium; MOSFET circuits; Nitrogen; Random access memory;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium Proceedings, 2006. 44th Annual., IEEE International

Conference_Location

San Jose, CA

Print_ISBN

0-7803-9498-4

Electronic_ISBN

0-7803-9499-2

Type

conf

DOI

10.1109/RELPHY.2006.251336

Filename

4017277