Silicon tunnel diodes formed by proximity rapid thermal diffusion

Author

Wang, Jinli ; Wheeler, Dane ; Yan, Yan ; Zhao, Jialin ; Howard, Scott ; Seabaugh, Alan

Author_Institution

Dept. of Electr. Eng., Notre Dame Univ., IN, USA

fYear

2002

fDate

6-8 Aug. 2002

Firstpage

393

Lastpage

401

Abstract

We demonstrate the first silicon tunnel diodes formed using proximity rapid thermal diffusion and spin-on diffusants. Room temperature peak-to-valley current ratio (PVR) of 2 is obtained at approximately 100 A/cm² peak current density. Secondary ion mass spectroscopy is used to compare proximity rapid thermal diffusion with rapid thermal diffusion from spin-coated diffusants in direct contact with a device wafer. The proximity rapid thermal diffusion approach provides a cleaner wafer surface for subsequent processing and yields tunnel diodes with good local uniformity.

Keywords

current density; doping profiles; elemental semiconductors; rapid thermal processing; secondary ion mass spectra; semiconductor doping; silicon; thermal diffusion; tunnel diodes; SIMS; Si tunnel diodes; current density; local uniformity; peak-to-valley current ratio; proximity rapid thermal diffusion; secondary ion mass spectroscopy; spin-on diffusants; CMOS process; CMOS technology; Circuits; Diodes; Fabrication; Hafnium; Molecular beam epitaxial growth; Rapid thermal annealing; Rapid thermal processing; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

High Performance Devices, 2002. Proceedings. IEEE Lester Eastman Conference on

Print_ISBN

0-7803-7478-9

Type

conf

DOI

10.1109/LECHPD.2002.1146779

Filename

1146779