Title :
Effect of Chemical Mechanical Polish Process on Low-Temperature Poly-Sige Thin-Film Transistors
Author :
Shieh, Ming-Shan ; Chen, Chih-Yang ; Hsu, Yuan-Jiun ; Wang, Shen-De ; Lei, Tan-Fu
Author_Institution :
Inst. of Electron., Nat. Chiao Tung Univ., Hsin-Chu
Abstract :
The improvement of polycrystalline silicon germanium thin-film transistors (poly-SiGe TFTs) using NH3 passivation and chemical mechanical polishing (CMP) process was examined. Experimental results indicated that NH3 passivation could effectively improve the turn on characteristics. Moreover, the TFTs fabricated on polished poly-SiGe film exhibit higher carrier mobility, better subthreshold swing, lower threshold voltage, and higher on/off current ratio due to the smooth poly-SiGe interface
Keywords :
Ge-Si alloys; carrier mobility; chemical mechanical polishing; nitrogen compounds; passivation; thin film transistors; NH3; SiGe; carrier mobility; chemical mechanical polishing; on/off current ratio; passivation; polycrystalline silicon germanium thin-film transistors; subthreshold swing; threshold voltage; Chemical processes; Chemical vapor deposition; Germanium silicon alloys; Hot carriers; Passivation; Rough surfaces; Silicon germanium; Surface roughness; Thin film transistors; Threshold voltage; SiGe thin-film transistors; chemical mechanical polishing; passivation; smooth interface;
Conference_Titel :
Reliability Physics Symposium Proceedings, 2006. 44th Annual., IEEE International
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-9498-4
Electronic_ISBN :
0-7803-9499-2
DOI :
10.1109/RELPHY.2006.251337
