Effect of Chemical Mechanical Polish Process on Low-Temperature Poly-Sige Thin-Film Transistors

Author

Shieh, Ming-Shan ; Chen, Chih-Yang ; Hsu, Yuan-Jiun ; Wang, Shen-De ; Lei, Tan-Fu

Author_Institution

Inst. of Electron., Nat. Chiao Tung Univ., Hsin-Chu

fYear

2006

fDate

26-30 March 2006

Firstpage

711

Lastpage

712

Abstract

The improvement of polycrystalline silicon germanium thin-film transistors (poly-SiGe TFTs) using NH₃ passivation and chemical mechanical polishing (CMP) process was examined. Experimental results indicated that NH₃ passivation could effectively improve the turn on characteristics. Moreover, the TFTs fabricated on polished poly-SiGe film exhibit higher carrier mobility, better subthreshold swing, lower threshold voltage, and higher on/off current ratio due to the smooth poly-SiGe interface

Keywords

Ge-Si alloys; carrier mobility; chemical mechanical polishing; nitrogen compounds; passivation; thin film transistors; NH₃; SiGe; carrier mobility; chemical mechanical polishing; on/off current ratio; passivation; polycrystalline silicon germanium thin-film transistors; subthreshold swing; threshold voltage; Chemical processes; Chemical vapor deposition; Germanium silicon alloys; Hot carriers; Passivation; Rough surfaces; Silicon germanium; Surface roughness; Thin film transistors; Threshold voltage; SiGe thin-film transistors; chemical mechanical polishing; passivation; smooth interface;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium Proceedings, 2006. 44th Annual., IEEE International

Conference_Location

San Jose, CA

Print_ISBN

0-7803-9498-4

Electronic_ISBN

0-7803-9499-2

Type

conf

DOI

10.1109/RELPHY.2006.251337

Filename

4017278