Process Induced Instability and Reliability Issues in Low Temperature Poly-Si Thin Film Transistors

Author

Chen, Chih-Yang ; Wang, Shen-De ; Shieh, Ming-Shan ; Chen, Wei-Cheng ; Hsiao-Yi Lin ; Yeh, Kuan-Lin ; Lee, Jam-Wen ; Lei, Tan-Fu

Author_Institution

Inst. of Electron., Nat. Chiao Tung Univ., Hsin-Chu

fYear

2006

fDate

26-30 March 2006

Firstpage

713

Lastpage

714

Abstract

We investigated the impact of plasma process on the devices´ performance and reliability degradation of low temperature poly-Si thin film transistors (LTPS TFTs). LTPS TFTs with different antenna areas were used to study the effects of the plasma etching process on the devices. The larger TFT antenna area, the more performance instability occurs. The reliability of LTPS TFTs with large antenna areas was found to be degraded from gate bias stress and hot carrier stress

Keywords

antennas; hot carriers; semiconductor device reliability; silicon; sputter etching; thin film transistors; Si; antenna; device performance degradation; device reliability degradation; gate bias stress; hot carrier stress; low temperature poly-silicon thin film transistors; plasma etching process; Degradation; Electron traps; Hot carriers; Plasma applications; Plasma devices; Plasma materials processing; Plasma properties; Plasma temperature; Stress; Thin film transistors; LTPS TFTs; antenna area; gate bias stress; hot carrier stress;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium Proceedings, 2006. 44th Annual., IEEE International

Conference_Location

San Jose, CA

Print_ISBN

0-7803-9498-4

Electronic_ISBN

0-7803-9499-2

Type

conf

DOI

10.1109/RELPHY.2006.251338

Filename

4017279