DocumentCode
2733528
Title
Solid source molecular beam epitaxy of GaxIn1-x AsyP1-y materials for 1.3 μm lasers
Author
Baillargeon, J.N. ; Hwang, W.Y. ; Chu, S.N.G. ; Cho, A.Y.
Author_Institution
Lucent Technol., AT&T Bell Labs., Murray Hill, NJ, USA
fYear
1997
fDate
8-11 Sep 1997
Firstpage
99
Lastpage
102
Abstract
Growth of lattice matched 1.12Q and 1.3Q GaxIn1-x AsyP1-y was performed with all solid source molecular beam epitaxy. Different P and As valved cracking cell designs were investigated to enhance photoluminescence (PL) emission uniformity. With appropriately constructed cells, the variation in the PL emission wavelength across a two inch diameter wafer could be made as small as ~1% at 1.3 μm and 0.6% at 1.12 μm. Multi-quantum well laser diodes fabricated with strained wells and lattice matched barriers show a transparency current density as low as 71 A/cm2 per well and greater than 0.5 W/A efficiencies
Keywords
III-V semiconductors; current density; gallium arsenide; gallium compounds; indium compounds; laser transitions; molecular beam epitaxial growth; photoluminescence; quantum well lasers; semiconductor growth; transparency; 1.3 mum; GaxIn1-xAsyP1-y materials; GaInAsP; PL emission wavelength; cracking cell designs; efficiencies; lattice matched barriers; lattice matched layers growth; multi-quantum well laser diodes; photoluminescence; solid source molecular beam epitaxy; strained wells; transparency current density; Diodes; Distributed feedback devices; Indium phosphide; Laser beams; Lattices; Molecular beam epitaxial growth; Optical materials; Solids; Structural beams; Valves;
fLanguage
English
Publisher
ieee
Conference_Titel
Compound Semiconductors, 1997 IEEE International Symposium on
Conference_Location
San Diego, CA
Print_ISBN
0-7503-0556-8
Type
conf
DOI
10.1109/ISCS.1998.711572
Filename
711572
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