Investigation into the Dependency of Plasma Induced Damage on the Structural MOS Geometry with a Fast WLR Stress and Measurement Sequence

Here in this work this new type of fast WLR (fWLR) stress sequence is used together with a large set of test structures. This fast stress does not result in lifetimes but pinpoints extrinsic characteristics and the differences between lots and wafers and is highly suitable for in-line measurements. For the optimization of the structural PID sensitivity, the transistor geometries were varied. It is shown that structural PID sensitivity depends not only on the size of the antenna area but also on the size of the active MOS area and the W/L ratio of the MOS transistor