High linearity, robust, AlGaN-GaN HEMTs for LNA and receiver ICs

Author

Parikh, P. ; Wu, Y. ; Moore, M. ; Chavarkar, P. ; Mishra, U. ; Neidhard, R. ; Kehias, L. ; Jenkins, T.

Author_Institution

Cree Lighting Co., USA

fYear

2002

fDate

6-8 Aug. 2002

Firstpage

415

Lastpage

421

Abstract

AlGaN-GaN HEMTs have not only been identified as the technology of choice for next generation high-power, high frequency applications but recently have also garnered interest for low noise receiver applications. In this paper, we discuss the noise figure and linearity of robust GaN HEMTs for LNA integrated circuits. GaN HEMTs with a low noise figure of 0.75 dB at X-band are presented. We believe this is the first comprehensive report combining all major requirements of a robust LNA-receiver technology: low noise figure, high linearity and high survivability.

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; aluminium compounds; gallium compounds; high electron mobility transistors; integrated circuit noise; integrated circuit reliability; microwave receivers; wide band gap semiconductors; 0.75 dB; AlGaN-GaN; AlGaN-GaN HEMTs; LNA integrated circuits; X-band noise figure; epistructure growth; high linearity HEMTs; high survivability; linearity characterization; low noise receiver applications; noise characterization; robust LNA-receiver technology; survivability characterization; Aluminum gallium nitride; Frequency; Gallium nitride; HEMTs; Integrated circuit noise; Integrated circuit technology; Linearity; MODFETs; Noise figure; Noise robustness;

fLanguage

English

Publisher

ieee

Conference_Titel

High Performance Devices, 2002. Proceedings. IEEE Lester Eastman Conference on

Print_ISBN

0-7803-7478-9

Type

conf

DOI

10.1109/LECHPD.2002.1146782

Filename

1146782