Title :
AlGaN/GaN HEMT high-power and low-noise performance at f≥20 GHz
Author :
Smorchkova, I.P. ; Wojtowicz, M. ; Tsai, R. ; Sandhu, R. ; Barsky, M. ; Namba, C. ; Liu, P.H. ; Dia, R. ; Truong, M. ; Ko, D. ; Wang, J. ; Wang, H. ; Khan, A.
Author_Institution :
TRW Space & Electron. Group, Redondo Beach, CA, USA
Abstract :
Reports on the power and noise performance of AlGaN/GaN HEMTs in the K (18-27 GHz) band. At 20 GHz, a record CW output power of 2 W with an associated gain of 8 dB and PAE of 33% has been achieved on an 8-finger 0.2 μm×500 μm device. Minimum noise figure of 1.4 dB has been achieved on a 0.15 μm×200 μm device at 26 GHz. The data demonstrate the viability of AlGaN/GaN HEMTs for high-frequency power and LNA applications.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; microwave field effect transistors; microwave power transistors; power HEMT; semiconductor device noise; 0.15 micron; 0.2 micron; 1.4 dB; 18 to 27 GHz; 2 W; 33 percent; 8 dB; AlGaN-GaN; AlGaN/GaN; CW output power; HEMT; K band; LNA; PAE; high-frequency applications; low-noise performance; power performance; Aluminum gallium nitride; Electric breakdown; Electrons; Frequency; Gallium nitride; HEMTs; Low-noise amplifiers; Microwave devices; Noise figure; Power generation;
Conference_Titel :
High Performance Devices, 2002. Proceedings. IEEE Lester Eastman Conference on
Print_ISBN :
0-7803-7478-9
DOI :
10.1109/LECHPD.2002.1146783
