DocumentCode
2733595
Title
Investigation of Hot carrier Degradation in Grooved Channel Structure nMOSFETs: Sphere shaped Recess Cell Array Transistor (SRCAT)
Author
Seo, J.Y. ; Lee, K.J. ; Kim, H. ; Lee, S.Y. ; Lee, S.S. ; Lee, W.S. ; Kim, Y.J. ; Hwang, S.J. ; Yoon, C.K.
Author_Institution
Memory Div., Samsung Electron., Gyeonggi-Do
fYear
2006
fDate
26-30 March 2006
Firstpage
723
Lastpage
724
Abstract
In this paper, first, it has been discussed hot carrier reliability in both Pch, RCAT and SRCAT. Second, we showed the origin of electric field suppression where the supply-voltage is applied at the same bias condition. Furthermore, we discuss the effects of ion implant process
Keywords
MOSFET; electric fields; hot carriers; ion implantation; semiconductor device reliability; transistors; Pch; SRCAT; electric field suppression; hot carrier degradation investigation; hot carrier reliability; ion implant process; nMOSFET; sphere shaped recess cell array transistor; supply-voltage; DRAM chips; Degradation; Doping; Electric variables; Hot carriers; Impact ionization; Implants; MOSFET circuits; Random access memory; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium Proceedings, 2006. 44th Annual., IEEE International
Conference_Location
San Jose, CA
Print_ISBN
0-7803-9498-4
Electronic_ISBN
0-7803-9499-2
Type
conf
DOI
10.1109/RELPHY.2006.251343
Filename
4017284
Link To Document