Dynamic loadline analysis of AlGaN/GaN HEMTs

Author

Green, Bruce M. ; Kaper, Valery S. ; Tilak, Vinayak ; Shealy, James R. ; Eastman, Lester F.

fYear

2002

fDate

6-8 Aug. 2002

Firstpage

443

Lastpage

452

Abstract

Surface trapping has been identified as a mechanism for lower than expected output power for experimental AlGaN/GaN HEMTs devices. This paper presents dynamic loadline analysis as a means of understanding device behavior that limits large signal performance. From observations of measured data, a model for bias-dependent drain resistance caused by trap-induced space-charge in the ungated region on the drain side of the gate is proposed. This bias-dependent drain resistance model is implemented in conjunction with a Curtice-cubic analytical transistor model to simulate the observed behavior.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; microwave field effect transistors; semiconductor device models; wide band gap semiconductors; AlGaN-GaN; AlGaN/GaN; Curtice-cubic analytical transistor model; HEMTs; bias-dependent drain resistance; bias-dependent drain resistance model; device behavior; dynamic loadline analysis; large signal performance; output power; surface trapping; trap-induced space-charge; ungated region; Aluminum gallium nitride; Analytical models; Electrical resistance measurement; Gallium nitride; HEMTs; MODFETs; Performance analysis; Power generation; Signal analysis; Surface resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

High Performance Devices, 2002. Proceedings. IEEE Lester Eastman Conference on

Print_ISBN

0-7803-7478-9

Type

conf

DOI

10.1109/LECHPD.2002.1146786

Filename

1146786