Title :
Dynamic loadline analysis of AlGaN/GaN HEMTs
Author :
Green, Bruce M. ; Kaper, Valery S. ; Tilak, Vinayak ; Shealy, James R. ; Eastman, Lester F.
Abstract :
Surface trapping has been identified as a mechanism for lower than expected output power for experimental AlGaN/GaN HEMTs devices. This paper presents dynamic loadline analysis as a means of understanding device behavior that limits large signal performance. From observations of measured data, a model for bias-dependent drain resistance caused by trap-induced space-charge in the ungated region on the drain side of the gate is proposed. This bias-dependent drain resistance model is implemented in conjunction with a Curtice-cubic analytical transistor model to simulate the observed behavior.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; microwave field effect transistors; semiconductor device models; wide band gap semiconductors; AlGaN-GaN; AlGaN/GaN; Curtice-cubic analytical transistor model; HEMTs; bias-dependent drain resistance; bias-dependent drain resistance model; device behavior; dynamic loadline analysis; large signal performance; output power; surface trapping; trap-induced space-charge; ungated region; Aluminum gallium nitride; Analytical models; Electrical resistance measurement; Gallium nitride; HEMTs; MODFETs; Performance analysis; Power generation; Signal analysis; Surface resistance;
Conference_Titel :
High Performance Devices, 2002. Proceedings. IEEE Lester Eastman Conference on
Print_ISBN :
0-7803-7478-9
DOI :
10.1109/LECHPD.2002.1146786
