• DocumentCode
    2733655
  • Title

    Interface-Trap Driven NBTI for Ultrathin (EOT~12Ã\x85) Plasma and Thermal Nitrided Oxynitrides

  • Author

    Gupta, G. ; Mahapatra, S. ; Madhav, L. Leela ; Varghese, D. ; Ahmed, K. ; Nouri, F.

  • Author_Institution
    Dept. of Electr. Eng., IIT Bombay, Mumbai
  • fYear
    2006
  • fDate
    26-30 March 2006
  • Firstpage
    731
  • Lastpage
    732
  • Abstract
    Negative bias temperature instability (NBTI) is studied in ultrathin Si oxynitride (SiON) films made by thermal (TNO) and plasma (PNO) processes. Threshold voltage degradation (DeltaVT) and recovery during and after NBTI stress are explained by generation and recovery of interface traps (DeltaNIT)
  • Keywords
    MOSFET; interface states; semiconductor device reliability; semiconductor thin films; silicon compounds; stability; stress analysis; 12 angstrom; SiON; negative bias temperature instability; plasma nitrided oxynitrides; thermal nitrided oxynitrides; threshold voltage degradation; ultrathin films; Hydrogen; Niobium compounds; Passivation; Plasma materials processing; Stress control; Stress measurement; Thermal engineering; Time measurement; Titanium compounds; Tunneling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium Proceedings, 2006. 44th Annual., IEEE International
  • Conference_Location
    San Jose, CA
  • Print_ISBN
    0-7803-9498-4
  • Electronic_ISBN
    0-7803-9499-2
  • Type

    conf

  • DOI
    10.1109/RELPHY.2006.251347
  • Filename
    4017288
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2733655