DocumentCode
2733670
Title
Physical Modeling of Negative Bias Temperature Instabilities for Predictive Extrapolation
Author
Huard, Vincent ; Parthasarath, C.R. ; Guerin, Cyrielle ; Denais, M.
Author_Institution
Philips Semicond., Crolles
fYear
2006
fDate
26-30 March 2006
Firstpage
733
Lastpage
734
Abstract
Based on new insights on measurement methodologies, interface traps creation and hole trapping as root causes of NBTI degradation are investigated in this paper. Physical modeling is proposed and the related extrapolation laws are discussed
Keywords
MOSFET; extrapolation; hole traps; interface states; semiconductor device models; stability; hole trapping; interface traps creation; measurement methodologies; negative bias temperature instabilities; physical modeling; predictive extrapolation; single hole emission; Degradation; Delay; Extrapolation; MOSFETs; Monitoring; Negative bias temperature instability; Niobium compounds; Predictive models; Titanium compounds; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium Proceedings, 2006. 44th Annual., IEEE International
Conference_Location
San Jose, CA
Print_ISBN
0-7803-9498-4
Electronic_ISBN
0-7803-9499-2
Type
conf
DOI
10.1109/RELPHY.2006.251348
Filename
4017289
Link To Document