Title :
Paradigm Shift for NBTI Characterization in Ultra-Scaled CMOS Technologies
Author :
Denais, M. ; Bravaix, A. ; Huard, V. ; Parthasarathy, C. ; Guerin, C. ; Ribes, G. ; Perrier, F. ; Mairy, M. ; Roy, D.
Author_Institution :
STMicroelectron., Crolles
Abstract :
We have proposed a new methodology to study both DC and AC NBTI effects taking into account both the recoverable property of the degradation and the electrical parameter legitimacy in each electrical configuration. In this new framework, characterization phases induce no effect (neither recovery nor extra-damage) on the degradation. For DC NBTI with a partial/uniform recovery, a generalized universal recovery modelling has been proposed for the first time to estimate the recovery amount. This modelling is particularly useful to calculate the recovery time needed after a stress period to reach a (decrease) degradation amount. For AC NBTI case, NBTI has been directly studied on circuits parameters opening new promising perspectives in term of reliability criteria
Keywords :
CMOS integrated circuits; integrated circuit reliability; integrated circuit testing; interface states; stability; AC NBTI effects; DC NBTI effects; electrical parameter legitimacy; paradigm shift; partial/uniform recovery; recoverable property; ultrascaled CMOS technologies; universal recovery modelling; CMOS technology; Circuits; Degradation; Dielectrics; Niobium compounds; Stress; Technology management; Time measurement; Titanium compounds; Voltage;
Conference_Titel :
Reliability Physics Symposium Proceedings, 2006. 44th Annual., IEEE International
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-9498-4
Electronic_ISBN :
0-7803-9499-2
DOI :
10.1109/RELPHY.2006.251349
