Title :
Novel Model for HCI Degradation and Impact of Conventional and Non-Conventional Scaling
Author :
Haggag, A. ; Kuffler, M. ; Zhang, D. ; Sadaka, M. ; Grudowski, P. ; Moosa, M.
Author_Institution :
Freescale Semicond. Inc., Austin, TX
Abstract :
We derive an HCI degradation model where bond breaking occurs via multiple local excitations as opposed to a classical carrier injection or single-impact excitation assumption. The model predicts a strong Id/W power-law dependence of HCI in addition to typical 1/Vdd dependence and is used to study the impact of conventional and non-conventional scaling on MOSFET HCI degradation versus the main scaling knobs: a) channel length scaling b) channel compressive/tensile stress, and c) top and side surface orientation
Keywords :
MOSFET; hot carriers; semiconductor device models; semiconductor device reliability; HCI degradation model; MOSFET; bond breaking; carrier injection; channel compressive stress; channel length scaling; channel tensile stress; conventional scaling; multiple local excitations; nonconventional scaling; power-law dependence; single-impact excitation assumption; surface orientation; Acceleration; Bonding; Degradation; Hot carriers; Human computer interaction; Intrusion detection; MOS devices; MOSFET circuits; Predictive models; Tensile stress;
Conference_Titel :
Reliability Physics Symposium Proceedings, 2006. 44th Annual., IEEE International
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-9498-4
Electronic_ISBN :
0-7803-9499-2
DOI :
10.1109/RELPHY.2006.251350
