Title :
Phonon-Energy-Coupling Enhancement: Dramatic Improvement of the Reliability of Silicon MOS Transistors
Author :
Chen, Zhi ; Guo, Jun
Author_Institution :
Dept. of Electr. & Comput. Eng., Kentucky Univ., Lexington, KY
Abstract :
The vibrational modes of the Si-Si and Si-O bonds exhibit enhanced energy coupling when RTP is applied to the SiO2/Si system. When applying this effect to the MOS transistors, we observed dramatic reliability improvement of MOS devices. The breakdown voltage of the gate oxide (10-20 nm) has been improved by 40%. The hot-electron related lifetime of MOS transistors has been improved by 100 times over the deuterium-annealed transistors
Keywords :
MOSFET; hot carriers; semiconductor device reliability; silicon compounds; 10 to 20 nm; MOS devices; MOS transistors reliability; Si-O; Si-Si; SiO2-Si; breakdown voltage; deuterium-annealed transistors; energy coupling; gate oxide; hot-electron; phonon-energy-coupling enhancement; Annealing; Degradation; Deuterium; Electromagnetic wave absorption; Infrared spectra; Isotopes; MOSFETs; Phonons; Rough surfaces; Silicon;
Conference_Titel :
Reliability Physics Symposium Proceedings, 2006. 44th Annual., IEEE International
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-9498-4
Electronic_ISBN :
0-7803-9499-2
DOI :
10.1109/RELPHY.2006.251351
