DocumentCode
2733795
Title
A new wide dynamic range CMOS pulse-frequency-modulation digital image sensor with in-pixel variable reference voltage
Author
Chen, Y. ; Yuan, F. ; Khan, G.
Author_Institution
Dept. of Electr. & Comput. Eng., Ryerson Univ., Toronto, ON
fYear
2008
fDate
10-13 Aug. 2008
Firstpage
129
Lastpage
132
Abstract
This paper proposes a new pulse-frequency-modulation (PFM) digital pixel sensor (DPS) with an in-pixel variable reference voltage generator to increase the resolution of the pixel, especially when the level of illumination is low. The proposed PFM DPS offers the attractive characteristics of a reduced integration time when the level of illumination is low, reduced complexity of routing and silicon cost, and comparable fill factor as that of conventional PFM DPS, however, with a significantly improved dynamic range. The proposed digital image sensor is implemented in TSMC-0.18 mum 1.8 V CMOS technology and validated using Spectre with BSIM3V3 device models. Simulation results demonstrate that the PFM digital pixel has a dynamic range of 150 dB when integration time is set to 60 mus, approximately 70 dB more than the conventional PFM digital pixel sensors.
Keywords
CMOS digital integrated circuits; CMOS image sensors; pulse frequency modulation; reference circuits; BSIM3V3 device models; PFM digital pixel sensor; Si; TSMC CMOS technology; digital image sensor; fill factor; in-pixel variable reference voltage generator; pulse-frequency-modulation; size 0.18 mum; voltage 1.8 V; wide dynamic range CMOS image sensor; CMOS image sensors; CMOS technology; Digital images; Dynamic range; Lighting; Pulse generation; Routing; Sensor phenomena and characterization; Silicon; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 2008. MWSCAS 2008. 51st Midwest Symposium on
Conference_Location
Knoxville, TN
ISSN
1548-3746
Print_ISBN
978-1-4244-2166-4
Electronic_ISBN
1548-3746
Type
conf
DOI
10.1109/MWSCAS.2008.4616753
Filename
4616753
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