1.3 μm wavelength GaInAsP/InP distributed feedback lasers grown directly on grating substrates by solid source molecular beam epitaxy

Author

Hwang, W.Y. ; Baillargeon, J.N. ; Chu, S.N.G. ; Sciortino, P.F. ; Cho, A.Y.

Author_Institution

Lucent Technol., AT&T Bell Labs., Murray Hill, NJ, USA

fYear

1997

fDate

8-11 Sep 1997

Firstpage

109

Lastpage

112

Abstract

Successful growth of GaInAsP/InP multi-quantum well lasers directly on a distributed feedback (DFB) grating substrate using all solid source molecular beam epitaxy (MBE) was demonstrated. A 500 Å thick 1.12 μm wavelength GaInAsP planarization layer was first grown on the DFB gratings at an elevated temperature to create a smooth surface for subsequent layer growth. Transmission electron micrograph showed smooth interfaces after the growth of this GaInAsP planarization layer. Low threshold current density and high quantum efficiency were obtained from these index-coupled DFB lasers grown by solid source MBE

Keywords

current density; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; molecular beam epitaxial growth; quantum well lasers; semiconductor epitaxial layers; semiconductor growth; transmission electron microscopy; 1.3 mum; GaInAsP planarization layer; GaInAsP-InP; TEM; distributed feedback lasers; grating substrates; index-coupled DFB lasers; layer growth; multi-quantum well lasers; quantum efficiency; smooth interfaces; solid source MBE; threshold current density; Distributed feedback devices; Gratings; Indium phosphide; Laser feedback; Molecular beam epitaxial growth; Planarization; Solid lasers; Substrates; Surface waves; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductors, 1997 IEEE International Symposium on

Conference_Location

San Diego, CA

Print_ISBN

0-7503-0556-8

Type

conf

DOI

10.1109/ISCS.1998.711574

Filename

711574