DocumentCode :
2733982
Title :
Recent R&D topics on concentrator multi-junction solar cells and materials under innovative solar cells´s project
Author :
Yamaguchi, Masafumi ; Suzuki, Hidetoshi ; Ohshita, Yoshio ; Kojima, Nobuaki ; Takamoto, Tatsuya
Author_Institution :
Toyota Technol. Inst., Nagoya, Japan
fYear :
2010
fDate :
20-25 June 2010
Abstract :
III-V compound multi-junction solar cells have great potential for space and terrestrial applications because they have high efficiency potential of more than 50% and superior radiation-resistance. We have been studying concentrator multi-junction solar cells under Japanese Innovative Photovoltaic R&D program started since FY2008. This paper presents our new achievements in super high-efficiency multi-junction and concentrator solar cells. We have obtained promising results: 1) 35.8% efficiency InGaP/GaAs/InGaAs 3-junction cells, 2) high quality (In)GaAsN material with higher mobility by chemical beam epitaxy compared to those grown by the other growth methods.
Keywords :
III-V semiconductors; chemical beam epitaxial growth; solar cells; III-V compound multijunction solar cells; Japanese Innovative Photovoltaic R&D program; chemical beam epitaxy; concentrator multijunction solar cells; radiation-resistance; Films; Gallium arsenide; Junctions; Photovoltaic cells; Photovoltaic systems;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2010 35th IEEE
Conference_Location :
Honolulu, HI
ISSN :
0160-8371
Print_ISBN :
978-1-4244-5890-5
Type :
conf
DOI :
10.1109/PVSC.2010.5614172
Filename :
5614172
Link To Document :
بازگشت