Title :
The growth of mid-infrared emitting InAsSb/InAsP strained-layer superlattices using metal-organic chemical vapor deposition
Author :
Biefeld, R.M. ; Allerman, A.A. ; Kurtz, S.R. ; Burkhart, J.H.
Author_Institution :
Sandia Nat. Labs., Albuquerque, NM, USA
Abstract :
We describe the metal-organic chemical vapor deposition of InAsSb/InAsP strained-layer superlattice (SLS) active regions for use in mid-infrared emitters. These SLSs were grown at 500°C, and 200 torr in a horizontal quartz reactor using trimethylindium, triethylantimony, AsH3, and PH3. By changing the layer thickness and composition we have prepared structures with low temperature (⩽20 K) photoluminescence wavelengths ranging from 3.2 to 5.0 μm. Excellent performance was observed for an SLS light emitting diode (LED) and both optically pumped and electrically injected SLS lasers. An InAsSb/InAsP SLS injection laser emitted at 3.3 μm at 80 K with peak power of 100 mW
Keywords :
III-V semiconductors; MOCVD; indium compounds; light emitting diodes; photoluminescence; semiconductor lasers; semiconductor superlattices; 200 torr; 500 degC; InAsSb-InAsP; MOCVD; electrically injected lasers; horizontal quartz reactor; layer thickness; light emitting diode; mid-infrared emitters; optically pumped lasers; photoluminescence; strained-layer superlattices; triethylantimony; trimethylindium; Ash; Chemical vapor deposition; Inductors; Laser sintering; Light emitting diodes; Metallic superlattices; Photoluminescence; Pump lasers; Stimulated emission; Temperature distribution;
Conference_Titel :
Compound Semiconductors, 1997 IEEE International Symposium on
Conference_Location :
San Diego, CA
Print_ISBN :
0-7503-0556-8
DOI :
10.1109/ISCS.1998.711575
