The growth of mid-infrared emitting InAsSb/InAsP strained-layer superlattices using metal-organic chemical vapor deposition

Author

Biefeld, R.M. ; Allerman, A.A. ; Kurtz, S.R. ; Burkhart, J.H.

Author_Institution

Sandia Nat. Labs., Albuquerque, NM, USA

fYear

1997

fDate

8-11 Sep 1997

Firstpage

113

Lastpage

116

Abstract

We describe the metal-organic chemical vapor deposition of InAsSb/InAsP strained-layer superlattice (SLS) active regions for use in mid-infrared emitters. These SLSs were grown at 500°C, and 200 torr in a horizontal quartz reactor using trimethylindium, triethylantimony, AsH₃, and PH₃. By changing the layer thickness and composition we have prepared structures with low temperature (⩽20 K) photoluminescence wavelengths ranging from 3.2 to 5.0 μm. Excellent performance was observed for an SLS light emitting diode (LED) and both optically pumped and electrically injected SLS lasers. An InAsSb/InAsP SLS injection laser emitted at 3.3 μm at 80 K with peak power of 100 mW

Keywords

III-V semiconductors; MOCVD; indium compounds; light emitting diodes; photoluminescence; semiconductor lasers; semiconductor superlattices; 200 torr; 500 degC; InAsSb-InAsP; MOCVD; electrically injected lasers; horizontal quartz reactor; layer thickness; light emitting diode; mid-infrared emitters; optically pumped lasers; photoluminescence; strained-layer superlattices; triethylantimony; trimethylindium; Ash; Chemical vapor deposition; Inductors; Laser sintering; Light emitting diodes; Metallic superlattices; Photoluminescence; Pump lasers; Stimulated emission; Temperature distribution;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductors, 1997 IEEE International Symposium on

Conference_Location

San Diego, CA

Print_ISBN

0-7503-0556-8

Type

conf

DOI

10.1109/ISCS.1998.711575

Filename

711575