Title :
A 40GHz superheterodyne receiver integrated in 0.13μm BiCMOS SiGe:C HBT technology
Author :
Pruvost, S. ; Telliez, I. ; Danneville, F. ; Dambrine, G. ; Laurens, M.
Author_Institution :
STMicroelectronics, Crolles, France
Abstract :
This paper presents a superheterodyne down-converter realized using SiGe:C BiCMOS HBT. Based on a single-ended architecture, the low noise amplifier (LNA), the fundamental oscillator and the mixer were first characterized separately and finally the down-converter. The down-converter exhibits conversion gain of 13 dB and NFDSB of 7 dB, and the associated oscillator performs phase noise of -90 dBc/Hz at 1 MHz from the 40 GHz carrier frequency.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; carbon; heterojunction bipolar transistors; low noise amplifiers; millimetre wave frequency convertors; millimetre wave receivers; mixers (circuits); oscillators; phase noise; superheterodyne receivers; 0.13 micron; 1 MHz; 13 dB; 40 GHz; 7 dB; BiCMOS HBT technology; SiGe:C; fundamental oscillator; heterojunction bipolar transistor; low noise amplifier; mixer; mm-wave design; phase noise; superheterodyne down-converter; superheterodyne receiver; BiCMOS integrated circuits; Circuit simulation; Circuit topology; Cutoff frequency; Heterojunction bipolar transistors; Low-noise amplifiers; Millimeter wave technology; Mixers; Oscillators; Performance gain;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2005. Proceedings of the
Print_ISBN :
0-7803-9309-0
DOI :
10.1109/BIPOL.2005.1555190
