Title :
A SiGe BiCMOS instrumentation channel for extreme environment applications
Author :
Ulaganathan, C. ; Nambiar, N. ; Prothro, B. ; Greenwell, R. ; Chen, S. ; Blalock, B.J. ; Britton, C.L., Jr. ; Ericson, M.N. ; Hoang, H. ; Broughton, R. ; Cornett, K. ; Fu, G. ; Mantooth, H.A. ; Cressler, J.D. ; Berger, R.W.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Tennessee Univ., Knoxville, TN
Abstract :
A instrumentation channel has been designed, implemented and tested in a 0.5-mum SiGe BiCMOS process. The circuit features a reconfigurable Wheatstone bridge network that interfaces a range of external sensors to signal processing circuits. Also, analog sampling has been implemented in the channel using a flying capacitor configuration. Measurement results show the instrumentation channel supports input signals up to 200 Hz.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; bridge circuits; integrated circuit testing; signal processing; BiCMOS instrumentation channel; SiGe; extreme environment; flying capacitor; integrated circuit testing; reconfigurable Wheatstone bridge network; signal processing circuits; size 0.5 micron; BiCMOS integrated circuits; Bridge circuits; Capacitors; Circuit testing; Germanium silicon alloys; Instruments; Sensor phenomena and characterization; Signal processing; Signal sampling; Silicon germanium;
Conference_Titel :
Circuits and Systems, 2008. MWSCAS 2008. 51st Midwest Symposium on
Conference_Location :
Knoxville, TN
Print_ISBN :
978-1-4244-2166-4
Electronic_ISBN :
1548-3746
DOI :
10.1109/MWSCAS.2008.4616775
