Title :
Substrate batch effect in GaAs MESFET under ultra-short pulses
Author :
Bobreshov, A.M. ; Korovchenko, I.S. ; Stepkin, V.A. ; Uskov, G.K.
Author_Institution :
Phys. Dept., Voronezh State Univ., Voronezh
Abstract :
Experimental investigation of GaAs MESFET substrate batch effect on characteristics of ultra-short pulses exposure was carried out. The effect of differences substrate deep level concentration in MESFET under this exposure was simulated. These effects was investigated and described.
Keywords :
Schottky gate field effect transistors; gallium arsenide; GaAs; MESFET; substrate batch effect; substrate deep level concentration; ultrashort pulses; Circuits; Degradation; Gallium arsenide; Interference; MESFETs; Microwave devices; Physics; Pulse amplifiers; Substrates; Voltage;
Conference_Titel :
Electromagnetic Compatibility, 2009 20th International Zurich Symposium on
Conference_Location :
Zurich
Print_ISBN :
978-3-9523286-4-4
DOI :
10.1109/EMCZUR.2009.4783472
