• DocumentCode
    2734216
  • Title

    Substrate batch effect in GaAs MESFET under ultra-short pulses

  • Author

    Bobreshov, A.M. ; Korovchenko, I.S. ; Stepkin, V.A. ; Uskov, G.K.

  • Author_Institution
    Phys. Dept., Voronezh State Univ., Voronezh
  • fYear
    2009
  • fDate
    12-16 Jan. 2009
  • Firstpage
    389
  • Lastpage
    392
  • Abstract
    Experimental investigation of GaAs MESFET substrate batch effect on characteristics of ultra-short pulses exposure was carried out. The effect of differences substrate deep level concentration in MESFET under this exposure was simulated. These effects was investigated and described.
  • Keywords
    Schottky gate field effect transistors; gallium arsenide; GaAs; MESFET; substrate batch effect; substrate deep level concentration; ultrashort pulses; Circuits; Degradation; Gallium arsenide; Interference; MESFETs; Microwave devices; Physics; Pulse amplifiers; Substrates; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electromagnetic Compatibility, 2009 20th International Zurich Symposium on
  • Conference_Location
    Zurich
  • Print_ISBN
    978-3-9523286-4-4
  • Type

    conf

  • DOI
    10.1109/EMCZUR.2009.4783472
  • Filename
    4783472
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2734216