DocumentCode
2734223
Title
The effects of layout variation on the thermal characteristics of SiGe HBTs
Author
Andrews, Joel ; Grens, Curtis ; Cressler, John D.
Author_Institution
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
fYear
2005
fDate
9-11 Oct. 2005
Firstpage
50
Lastpage
53
Abstract
The thermal properties of SiGe HBTs with multiple layout orientations and spacings are investigated. Device temperature gradients measured with an infrared camera are correlated to electrically extracted temperatures, and their impact on device performance assessed.
Keywords
Ge-Si alloys; heterojunction bipolar transistors; SiGe; device temperature gradients; heterojunction bipolar transistor; infrared camera; layout orientations; layout variation; thermal characteristics; thermal properties; Current density; Fingers; Germanium silicon alloys; Heterojunction bipolar transistors; Integrated circuit modeling; Silicon germanium; Temperature measurement; Thermal conductivity; Thermal engineering; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Bipolar/BiCMOS Circuits and Technology Meeting, 2005. Proceedings of the
Print_ISBN
0-7803-9309-0
Type
conf
DOI
10.1109/BIPOL.2005.1555199
Filename
1555199
Link To Document