Title :
The effects of layout variation on the thermal characteristics of SiGe HBTs
Author :
Andrews, Joel ; Grens, Curtis ; Cressler, John D.
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
Abstract :
The thermal properties of SiGe HBTs with multiple layout orientations and spacings are investigated. Device temperature gradients measured with an infrared camera are correlated to electrically extracted temperatures, and their impact on device performance assessed.
Keywords :
Ge-Si alloys; heterojunction bipolar transistors; SiGe; device temperature gradients; heterojunction bipolar transistor; infrared camera; layout orientations; layout variation; thermal characteristics; thermal properties; Current density; Fingers; Germanium silicon alloys; Heterojunction bipolar transistors; Integrated circuit modeling; Silicon germanium; Temperature measurement; Thermal conductivity; Thermal engineering; Voltage;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2005. Proceedings of the
Print_ISBN :
0-7803-9309-0
DOI :
10.1109/BIPOL.2005.1555199
