Title :
Study of bipolar transistor matching at high current level with various test configurations leading to a new model approach
Author :
Bordez, Samuel ; Danaie, Stéphane ; Difrenza, Régis ; Vildeuil, Jean-Charles ; Morin, Gérard
Author_Institution :
STMicroelectronics, Crolles, France
Abstract :
Matching of bipolar transistors has been characterized for high currents. The predominant impact of access resistance mismatch is clearly demonstrated, and matching models are suggested. Moreover, matching results dependency on test configurations is studied.
Keywords :
bipolar transistors; semiconductor device models; semiconductor device testing; access resistance mismatch; bipolar transistor matching; matching models; Bipolar transistors; Current measurement; Electrical resistance measurement; Electronic mail; Force measurement; Integrated circuit testing; Performance evaluation; Reproducibility of results; Stress; Voltage;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2005. Proceedings of the
Print_ISBN :
0-7803-9309-0
DOI :
10.1109/BIPOL.2005.1555201
