DocumentCode
2734261
Title
Study of bipolar transistor matching at high current level with various test configurations leading to a new model approach
Author
Bordez, Samuel ; Danaie, Stéphane ; Difrenza, Régis ; Vildeuil, Jean-Charles ; Morin, Gérard
Author_Institution
STMicroelectronics, Crolles, France
fYear
2005
fDate
9-11 Oct. 2005
Firstpage
62
Lastpage
65
Abstract
Matching of bipolar transistors has been characterized for high currents. The predominant impact of access resistance mismatch is clearly demonstrated, and matching models are suggested. Moreover, matching results dependency on test configurations is studied.
Keywords
bipolar transistors; semiconductor device models; semiconductor device testing; access resistance mismatch; bipolar transistor matching; matching models; Bipolar transistors; Current measurement; Electrical resistance measurement; Electronic mail; Force measurement; Integrated circuit testing; Performance evaluation; Reproducibility of results; Stress; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Bipolar/BiCMOS Circuits and Technology Meeting, 2005. Proceedings of the
Print_ISBN
0-7803-9309-0
Type
conf
DOI
10.1109/BIPOL.2005.1555201
Filename
1555201
Link To Document