DocumentCode :
2734276
Title :
A 5-bits precision CMOS bandgap reference with on-chip bi-directional resistance trimming
Author :
Ekekwe, Ndubuisi ; Etienne-Cummings, Ralph
Author_Institution :
Dept. of Electr. & Comput. Eng., Johns Hopkins Univ., Baltimore, MD
fYear :
2008
fDate :
10-13 Aug. 2008
Firstpage :
257
Lastpage :
260
Abstract :
This paper presents the design and implementation of a high precision CMOS bandgap voltage reference. It uses an on-chip 5-bits bi-directional trimming array with 32 voltage levels to achieve process variations and temperature independence. The digitally programmable array is binary weighted for accuracy and flexibility. Implemented in a 0.5 mum 2P3M CMOS process, it consumes a total power of 7.2 mW and takes an active area of 0.024 mm2. Through trimming, the voltage temperature dependence was reduced from 102 ppm/degC to 6.2 ppm/degC within the temperature range of 10degC to 50degC.
Keywords :
CMOS integrated circuits; reference circuits; CMOS bandgap reference; digitally programmable array; on-chip bi-directional resistance trimming; power 7.2 mW; power consumption; size 0.5 mum; temperature 10 degC to 50 degC; total power; voltage temperature dependence; word length 5 bit; Batteries; Bidirectional control; Circuits; Diodes; Photonic band gap; Power supplies; Resistors; Temperature dependence; Temperature distribution; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems, 2008. MWSCAS 2008. 51st Midwest Symposium on
Conference_Location :
Knoxville, TN
ISSN :
1548-3746
Print_ISBN :
978-1-4244-2166-4
Electronic_ISBN :
1548-3746
Type :
conf
DOI :
10.1109/MWSCAS.2008.4616785
Filename :
4616785
Link To Document :
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