BSCR ESD protection in 250V process taking into account the turn-off effect

Author

Vashchenko, V.A. ; Hopper, P.

Author_Institution

National Semicond. Corp., Santa Clara, CA, USA

fYear

2005

fDate

9-11 Oct. 2005

Firstpage

70

Lastpage

73

Abstract

Bipolar SCR devices are studied as a potential ESD protection solution in case of a hi-voltage (250V) process. The problem of the HBM-TLP (human body model pulse-transmission line pulse) correlation is discussed based on pulsed measurements, ESD characterization and TCAD analysis, and is followed by a suggested new solution, based upon a multi-stage network and engineered to eliminate residual high turn-off voltage.

Keywords

BiCMOS integrated circuits; electrostatic discharge; technology CAD (electronics); thyristors; 250 V; BSCR ESD protection; BiCMOS process technology; ESD characterization; TCAD analysis; bipolar SCR devices; electrostatic discharge; human body model pulse-transmission line pulse correlation; multistage network; pulsed measurements; residual high turn-off voltage; silicon bipolar technology; silicon controlled rectifier; turn-off effect; Anodes; Circuits; Clamps; Displacement control; Electrostatic discharge; Protection; Pulse measurements; Silicon; Thyristors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting, 2005. Proceedings of the

Print_ISBN

0-7803-9309-0

Type

conf

DOI

10.1109/BIPOL.2005.1555203

Filename

1555203