New lateral DMOS and IGBT structures realized on a partial SOI substrate based on LEGO process

Author

Bertrand, I. ; Pathirana, V. ; Imbernon, E. ; Udrea, F. ; Bafleur, M.M. ; Ng, R. ; Granier, H. ; Rousset, B. ; Dilhac, J.-M.

Author_Institution

LAAS-CNRS, Toulouse, France

fYear

2005

fDate

9-11 Oct. 2005

Firstpage

74

Lastpage

77

Abstract

In this paper, we present new lateral DMOS and IGBT structures based on a partial SOI substrate. The partial SOI substrate, formed through LEGO recrystallization process improves considerably the breakdown capability and the thermal behavior of these devices compared to full SOI devices. Experimental results of high voltage power devices implemented on such a process are presented for the first time.

Keywords

MOSFET; insulated gate bipolar transistors; power semiconductor devices; silicon-on-insulator; IGBT structure; LEGO recrystallization process; breakdown capability; high voltage power devices; insulated gate bipolar transistor; lateral DMOS structure; partial SOI substrate; silicon-on-insulator; thermal behavior; Anodes; CMOS technology; Doping; Electric breakdown; Insulated gate bipolar transistors; Isolation technology; Micromechanical devices; Silicon on insulator technology; Substrates; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting, 2005. Proceedings of the

Print_ISBN

0-7803-9309-0

Type

conf

DOI

10.1109/BIPOL.2005.1555204

Filename

1555204