MBE growth and optical investigation of GaSb/AlSb VCSEL structures for the 1.5 μm range

Author

Koeth, J. ; Dietrich, R. ; Forchel, A.

Author_Institution

Wurzburg Univ., Germany

fYear

1997

fDate

8-11 Sep 1997

Firstpage

121

Lastpage

124

Abstract

We have investigated the growth of VCSELs based on the GaAlSb material system by solid source molecular beam epitaxy. Laser structures with different numbers of mirror layers have been analyzed by reflectivity experiments. We observe a systematic narrowing of the cavity resonance with increasing number of mirror layers down to a FWHM of 0.9 meV (50 K). The dependence of the FWHM of the cavity resonance on the number of mirror layers and the temperature dependence of the resonance energy are found to be in good agreement with results of transfer matrix theory calculations

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; laser cavity resonators; molecular beam epitaxial growth; reflectivity; refractive index; semiconductor epitaxial layers; semiconductor growth; semiconductor lasers; surface emitting lasers; 50 K; GaSb-AlSb; VCSEL structures; cavity resonance; mirror layers; reflectivity; resonance energy; solid source MBE growth; temperature dependence; transfer matrix theory; Buffer layers; Gallium arsenide; Laser tuning; Mirrors; Optical materials; Reflectivity; Refractive index; Resonance; Surface emitting lasers; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductors, 1997 IEEE International Symposium on

Conference_Location

San Diego, CA

Print_ISBN

0-7503-0556-8

Type

conf

DOI

10.1109/ISCS.1998.711577

Filename

711577