• DocumentCode
    2734574
  • Title

    High performance, low complexity vertical PNP BJT integrated in a 0.18μm SiGe BiCMOS technology

  • Author

    Voegeli, B.T. ; Gray, P.B. ; Rainey, B.A. ; Strieker, A.D. ; Feilchenfeld, N.B. ; Watson, K.M. ; St Onge, S.A. ; Dunn, J.S. ; Schmidt, N.T. ; Newton, K.M. ; Rascoe, J.S.

  • Author_Institution
    IBM Syst. & Technol. Group, Essex Junction, VT, USA
  • fYear
    2005
  • fDate
    9-11 Oct. 2005
  • Firstpage
    136
  • Lastpage
    140
  • Abstract
    An isolated vertical PNP BJT with fT and fMAX of 20GHz available as a modular component in a 0.18μm SiGe BiCMOS technology is described. The VPNP device is fabricated using a low complexity integration scheme and is optimized to complement the high breakdown SiGe NPN HBT.
  • Keywords
    BiCMOS integrated circuits; Ge-Si alloys; heterojunction bipolar transistors; microwave bipolar transistors; semiconductor device breakdown; 0.18 micron; 20 GHz; BiCMOS technology; SiGe; bipolar junction transistor; heterojunction bipolar transistor; vertical PNP BJT; BiCMOS integrated circuits; CMOS process; CMOS technology; Germanium silicon alloys; Heterojunction bipolar transistors; Integrated circuit technology; Isolation technology; Resistors; Silicon germanium; Thin film inductors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Bipolar/BiCMOS Circuits and Technology Meeting, 2005. Proceedings of the
  • Print_ISBN
    0-7803-9309-0
  • Type

    conf

  • DOI
    10.1109/BIPOL.2005.1555218
  • Filename
    1555218
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2734574