• DocumentCode
    2734656
  • Title

    Evaluation of Bondability and Reliability of Single Crystal Copper Wire Bonding

  • Author

    Chen, Hua ; Lee, S. W Ricky ; Ding, Yutian

  • Author_Institution
    Center for Adv. Microsystems Packaging, Hong Kong Univ. of Sci. & Technol., Kowloon
  • fYear
    2005
  • fDate
    27-29 June 2005
  • Firstpage
    1
  • Lastpage
    7
  • Abstract
    Copper-based interconnect is an emerging trend in microelectronics packaging. Some studies have shown that copper wires may serve as a viable, cost-effective alternative to gold in some high-end, ball and wedge bonding applications. This study is intended to evaluate the bondability and reliability of single crystal copper wire bonding. After annealing, the copper wires are bonded on gold (1-2 micron thick) and aluminum (2 micron thick) surfaces without gas protection. The bondability of single crystal copper wire is evaluated and compared with gold and aluminum wires. The intermetallic compounds (IMCs) between copper and gold and between copper and aluminum are identified on the fractured surfaces by EDAX. After thermal aging, wire pull and ball shear tests are performed and the test results are compared with those without thermal aging. From the present study, it is found that single crystal copper wires can be bonded on the gold pad and the aluminum pad by thermosonic ball bonding and wedge bonding without gas protection. Cu 3Au and AuCu IMCs are found at the copper/gold interface while CuAl2 is found at the copper/aluminum interface. After thermal aging, Kirkendall voids are discovered at the Cu/Au interface
  • Keywords
    X-ray chemical analysis; ageing; aluminium alloys; annealing; copper alloys; gold alloys; integrated circuit interconnections; lead bonding; 1 to 2 micron; Al-Cu; Au-Cu; EDAX; Kirkendall voids; ball shear tests; bondability evaluation; fractured surfaces; intermetallic compounds; microelectronics packaging; reliability evaluation; thermal aging; thermosonic ball bonding; wedge bonding; wire bonding; wire pull test; Aging; Aluminum; Bonding; Copper; Gold; Microelectronics; Protection; Surface cracks; Testing; Wire;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    High Density Microsystem Design and Packaging and Component Failure Analysis, 2005 Conference on
  • Conference_Location
    Shanghai
  • Print_ISBN
    0-7803-9292-2
  • Electronic_ISBN
    0-7803-9293-0
  • Type

    conf

  • DOI
    10.1109/HDP.2005.251403
  • Filename
    4017444