DocumentCode :
2734721
Title :
Input non-quasi-static effect in SiGe HBTs and its impact on noise modeling
Author :
Kejun Xia ; Niu, Guofu ; Sheridan, David ; Sweeney, Susan
Author_Institution :
Dept. of Electr. & Comput. Eng., Auburn Univ., AL, USA
fYear :
2005
fDate :
9-11 Oct. 2005
Firstpage :
180
Lastpage :
183
Abstract :
The input non-quasi-static (NQS) effects in SiGe HBTs are analyzed using Taylor series expansions of intrinsic Y-parameter expressions. The input NQS effect is shown to strongly affect extraction of the intrinsic base resistance and hence NFmin modeling.
Keywords :
Ge-Si alloys; heterojunction bipolar transistors; semiconductor device models; semiconductor device noise; SiGe; Taylor series expansions; heterojunction bipolar transistor; intrinsic Y-parameter expressions; intrinsic base resistance; noise modeling; nonquasistatic effect; Capacitance; Delay effects; Equivalent circuits; Germanium silicon alloys; Heterojunction bipolar transistors; Noise figure; Parameter extraction; Silicon germanium; Thermal resistance; Tin;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2005. Proceedings of the
Print_ISBN :
0-7803-9309-0
Type :
conf
DOI :
10.1109/BIPOL.2005.1555227
Filename :
1555227
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2734721
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