• DocumentCode
    2734721
  • Title

    Input non-quasi-static effect in SiGe HBTs and its impact on noise modeling

  • Author

    Kejun Xia ; Niu, Guofu ; Sheridan, David ; Sweeney, Susan

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Auburn Univ., AL, USA
  • fYear
    2005
  • fDate
    9-11 Oct. 2005
  • Firstpage
    180
  • Lastpage
    183
  • Abstract
    The input non-quasi-static (NQS) effects in SiGe HBTs are analyzed using Taylor series expansions of intrinsic Y-parameter expressions. The input NQS effect is shown to strongly affect extraction of the intrinsic base resistance and hence NFmin modeling.
  • Keywords
    Ge-Si alloys; heterojunction bipolar transistors; semiconductor device models; semiconductor device noise; SiGe; Taylor series expansions; heterojunction bipolar transistor; intrinsic Y-parameter expressions; intrinsic base resistance; noise modeling; nonquasistatic effect; Capacitance; Delay effects; Equivalent circuits; Germanium silicon alloys; Heterojunction bipolar transistors; Noise figure; Parameter extraction; Silicon germanium; Thermal resistance; Tin;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Bipolar/BiCMOS Circuits and Technology Meeting, 2005. Proceedings of the
  • Print_ISBN
    0-7803-9309-0
  • Type

    conf

  • DOI
    10.1109/BIPOL.2005.1555227
  • Filename
    1555227
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2734721